HM Double P-Channel Low Voltage MOSFET
- HM
- CHINA
- 1 WEEK
- 1000000
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Double P Channel Low Voltage MOSfet
型号 | Channel | VDS | VGS | VTH | ID | IDM | RDS(on) | Package | Substitution for below items |
HM4953/A | Double P | -30V | -20V | -1.6V | -5.1A | -20A | 48mΩ | SOP8 | CEM4953/APM4953/AP4953 |
HM4953B | Double P | -20V | -12V | -0.7V | -5A | -20A | 60mΩ | SOP8 | CEM4953/APM4953/AP4953 |
HM4953C | Double P | -27V | -20V | -1.1V | -5A | -20A | 52mΩ | SOP8 | CEM4953/APM4953/AP4953 |
HM4953D | Double P | -20V | -12V | -0.7V | -3A | -20A | 60mΩ | SOP8 | CEM4953/APM4953/AP4953 |
| HM20PD05 | Double P | -20V | -12V | -0.7V | -5A | -20A | 22mΩ | TSSOP8 | AO8801/AO8801A/AO8807 |
| HM4963 | Double P | -20V | -12V | -0.8V | -7A | -40A | 21mΩ | SOP8 | |
| HM4853 | Double P | -20V | -12V | -0.7V | -9A | -40A | 21mΩ | SOP8 | |
| HM4853A | Double P | -20V | -12V | -0.6V | -21A | -63A | 6.0mΩ | SOP8 | |
| HM4813 | Double P | -30V | -20V | -1.9V | -7A | -28A | 30mΩ | SOP8 | AO4813 |
| HM4805 | Double P | -30V | -20V | -1.5V | -9.1A | -50A | 15mΩ | SOP8 | AO4805/AO4821 |
| HM4805A | Double P | -30V | -12V | -1.5V | -12A | -48A | 11.8mΩ | SOP8 | AO4805 |
| HM4805B | Double P | -30V | -12V | -1.0V | -12A | -48A | 11.5mΩ | SOP8 | AO4805 |
| HM4843 | Double P | -40V | -20V | -1.5V | -6A | -20A | 73mΩ | SOP8 | AO4843 |
| HM4885 | Double P | -40V | -20V | -2.0V | -7.5A | -40A | 30mΩ | SOP8 | AO4885 |
| HM4885A | Double P | -40V | -20V | -2.0V | -13A | -52A | 12mΩ | SOP8 | AO4885 |
| HM4803 | Double P | -55V | -20V | -2.6V | -5A | -25A | 64mΩ | SOP8 | AO4803/AO4801 |
| HM4821 | Double P | -60V | -20V | -2.9V | -6.5A | -20A | 39mΩ | SOP8 | AO4821 |
| HM4821A | Double P | -60V | -20V | -2.6V | -9A | -27A | 25mΩ | SOP8 | |
| HM4821B | Double P | -60V | -20V | -2.6V | -14A | -42A | 20mΩ | SOP8 | |
| HM4887B | Double P | -100V | -20V | -1.9V | -3.5A | -10.5A | 210mΩ | SOP8 | AO4887 |
| HM4887 | Double P | -100V | -20V | -1.9V | -4.5A | -18A | 85mΩ | SOP8 | AO4887 |
| HM6801 | Double P | -30V | -20V | -1.6V | -2.5A | -10A | 72mΩ | SOT-26 | AO6801/AO6801A |
| HM6803 | Double P | -20V | -12V | -0.65V | -3A | -10A | 65mΩ | SOT-26 | AO6803 |
| HM6803D | Double P W/ ESD | -20V | -6V | -0.45V | -0.8A | -4A | 350mΩ | SOT23-6 | AO6803 |
| BSS84DM | Double P | -55V | -20V | -1.5V | -0.3A | -0.9A | 2.5Ω | SOT23-6 | BSS84DM |
| BSS84DW | Double P | -55V | -20V | -1.5V | -0.3A | -0.9A | 2.5Ω | SOT-363 | BSS84DW |
| HM2801D | Double P | -20V | -12V | -1.0V | -4.5A | -14A | 55mΩ | DFN2X2-6L | AON2801/AON2803 |
HM2803D | Double P | -20V | -12V | -0.7V | -5A | -15A | 39mΩ | DFN2X2-6L | AON2803 |
| HM3801DR | Double P | -30V | -12V | -1.0V | -6A | -30A | 50mΩ | DFN2X2-6L | AON2801/AON2803 |
| HM2819D | Double P | -40V | -20V | -1.5V | -5A | -15A | 73mΩ | DFN2X2-6L | |
| HM2809D | Double P | -60V | -20V | -1.8V | -3A | -12A | 150mΩ | DFN2X2-6L | |
| HM2301 BWKR | Double P W/ ESD | -20V | -8V | -0.45V | -0.8A | -4A | 350mΩ | SOT-363 | AO7801 |
Remarks:
1. The marked Id current is the maximum normal current of the MOS chip. The maximum normal current in actual use is also limited by the maximum current of the package. Therefore, the maximum current limit of the package shall be considered when the customer designs the product. It is suggested that the customer should consider the internal resistance parameter of MOS more importantly when designing the product.
2. It is recommended that a resistor (10K) and a voltage stabilizing diode (5V-12V) be connected between the gate source (G/S) poles of MOS to protect the overvoltage of the gate source (G/S) pole.
3. It is recommended to increase the opening voltage of MOS tube as much as possible, so that MOS tube can be fully opened and conducted. At this time, the internal resistance is minimum, and it is not easy to get hot. It is generally recommended that the VGS opening voltage of low voltage MOS should be set above 4.5V, and the opening voltage of medium and high voltage MOS should be set above 10V
4. Precautions for MOS circuit operation:
Static electricity can be generated in many places. The following precautions can effectively prevent damage to MOS circuits caused by static discharge:
• Operators shall be grounded through anti-static wrist strap.
• The equipment enclosure must be grounded.
• Tools used during assembly must be grounded.
• Must be packed or transported with conductor or anti-static materials
Our HM2301/SOT-23/3A/20V/PMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.
Our HM2302/SOT-23/3A/20V/NMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.
Our HM3400/SOT-23-3L/5.8A/30V/NMOS has the following advantages: it is packaged with 5.8A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.
Our HM3401/SOT-23-3L/4.2A/30V/PMOS has the following advantages: it is packaged with 4.2A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.
Our HM2310/SOT-23-3L/3A/60V/NMOS has the following advantages: 1. The withstand voltage can reach 60V, sufficient for 3A current, and it is packaged with large SOT-23. 2. It can be used for LED lighting and other products with high voltage resistance.
Our HM4953 has the advantages of large current and small internal resistance, which can be used in the full color screen market.
Our HM4430 has the advantages of large current, small internal resistance and current up to 18A. It is one of the products with the largest SOP8/NMOS current on the market.
The advantage of our HM4440 is that the withstand voltage can reach 60V, which is one of the largest SOP8/NMOS withstand voltage products on the market.
Advantages of HM8810E/SOT-26&TSSOP8/7A/20V/dual N MOS: It has a current of 7A and ESD static protection. Compared with the 8205 on the market, the current is larger and the internal resistance is smaller. It can directly replace AO8810/AO8820/AO8822/SSF2418E/SSF2816E. It is mainly used in high-end lithium battery protection board/mobile phone battery/multi section protection board/mobile power supply/charger/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.
Product application:
1. MP3/MP4/MP5/PMP player
2.MID/UMPC
3. GPS/Bluetooth headset
4. PDVD/on-board DVD/car audio
5. LCD TV/LCD display
6. Mobile power supply/electronic cigarette
7. Mobile phone battery, lithium battery protection board
8. LED lighting/LED power supply
9. LED display
10. Smart charger
11. Small household appliances, household appliances control panel
12. Computer motherboard and video card
