HM P-Channel Low Voltage MOSFET

  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
  • HM P-Channel Low Voltage MOSFET
HM P-Channel Low Voltage MOSFET
  • HM
  • CHINA
  • 1 WEEK
  • 1000000

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Model No.ChannelVDS
(Max)
VGSVTH
(Typ)
ID
(Max)
IDMRDS(on)
(Max)
PackageSubstitution for below items
HM2301/AP沟道-20V-12V-0.65V-3.0A-10A65mΩ

SOT23
SOT23-3L

Si2301/AP2301/SI2305
XP152A/IRLML6401/
IRML6402/AO3423
HM2301BP沟道-20V-12V-0.7V-2.5A-10A83mΩSOT23

Si2301/AP2301/XP152A
IRLML6402/AO3423

HM2301CP沟道-12V-12V-0.7V-2.8A-10A85mΩSOT23

Si2301/AP2301/XP152A
IRLML6402/AO3423

HM2301DP沟道/
带ESD保护
-20V-6V-0.45V-0.8A-4A350mΩSOT23Si2301/AP2301/XP152A
IRLML6402/AO3423
HM2301EP沟道-12V-12V-0.7V-2.0A-7A95mΩSOT23Si2301/AP2301/XP152A
IRLML6402/AO3423
HM2301FP沟道-20V-12V-0.75V-2.8A-11A82mΩSOT23Si2301/AP2301/XP152A
IRLML6402/AO3423
HM2301DRP沟道/
ESD 保护
-20V-6V-0.45V-0.8A-4A350mΩDFN1006-3LAON1605
HM2301KRP沟道-20V-12V-0.65V-3.0A-6A65mΩSOT-323AO7413/AO7403/
AO7407Si1317DL/
Si1315DL
HM2301BKR
/BSR/BJR
P沟道/
带ESD保护
-20V-6V-0.45V-0.8A-1.6A350mΩSOT-323
SOT-523
SOT-723
AO7413/AO7403/
AO7407Si1317DL/
Si1315DL
HM2305P沟道-20V-12V-0.7V-4.1A-15A39mΩSOT23Si2305/AP2305/
APM2305/IRLML6401/
IRML6402/AO3423
HM2305AP沟道-20V-12V-0.85V-4.7A-20A48mΩSOT23-3LSi2305/AP2305/
APM2305/IRLML6401/
IRML6402/AO342
HM2305BP沟道-12V-12V-0.7V-4.0A-15A40mΩSOT23Si2305/AP2305/
APM2305/IRLML6401/
IRML6402/AO3423
HM2305PRP沟道-20V-12V-0.7V-5.1A-20A39mΩSOT-89
HM2333P沟道-12V-12V-0.65V-6.0A-20A30mΩSOT23-3LSi2333/IRLML6302
HM2380P沟道
-18V
-12V
-0.55V
-5.6A
-24A
21mΩ
SOT23-3L

HM5P02MRP沟道-20V-10V-0.85V-5.0A-20A21.5mΩSOT23-3L
HM2307MRP沟道
-20V
-12V
-0.7V
-6.0A
-24A
20mΩ
SOT23-3L
Si2333/IRLML6302
HM2307A
P沟道
-20V
-12V
-0.6V
-9.0A
-25A
17mΩ
SOT23
Si2333/IRLML6302
HM8P02MRP沟道-18V-12V-0.68V-8.0A-32A15.4mΩSOT23-3L
HM3401E
P沟道

带ESD
保护

-30V
-6V
-0.85V
-0.8A
-3.2A
300mΩ
SOT23

HM2341/BP沟道-30V-12V-1.0V-4.2A-30A50mΩSOT23-3L
SOT23
WPM2341/Si2341/
AO3401AO3415/
IRLML6401/SI2307
HM3401/BP沟道-30V-12V-1.0V-4.2A-30A50mΩSOT23-3L
SOT23
AO3401/AO3415/
IRLML6401
/IRLML6402/SI2307
HM3401AP沟道-30V-12V-0.85V-4.5A-30A55mΩSOT23-3LAO3401/AO3415/
IRLML6401
/IRLML6402/SI2307
HM3401CP沟道-30V-20V-1.6V-2.5A-10A72mΩSOT23AO3401/AO3407/
AO3415/IRLML6401/
IRLML6402/SI2307
HM3401DP沟道-30V-12V-0.9V-4.6A-32A50mΩSOT23-3LAO3401/AO3407/
AO3415/IRLML6401/
IRLML6402/SI2307
HM3401PRP沟道-30V-12V-1.0V-5.2A-30A50mΩSOT-89XP202A/XP162A/
DTS2059DTS3059
HM2369P沟道-30V-20V-1.4V-8.0A-20A20mΩSOT23-3L
HM3407/A/BP沟道-30V-20V-1.5V-4.2A-20A55mΩSOT23-3L
SOT23
AO3407/AO3415/
IRLML6401
IRLML6402/SI2307
HM3413/BP沟道-20V-12V-0.7V-2.5A-10A118mΩSOT23-3L
SOT23
AO3413
HM3415EP沟道
带ESD保护
-20V-10V-0.65V-4.0A-30A34mΩSOT23-3L
AO3415
HM3421/BP沟道-30V-12V-1.0V-4.2A-30A50mΩSOT23-3L
SOT23
AO3421/AO3401/
AO3415WPM2341/
IRLML6401/SI2307
HM2319P沟道-40V-20V-1.8V-5.0A-20A67mΩSOT23-3LSi2319
HM2319AP沟道-40V20V-1.5V-5.0A-20A28mΩSOT23-3LSi2319
HM2319BP沟道-40V-20V-2.0V-4.4A-20A64mΩSOT-23Si2319
HM2319PRP沟道-40V-20V-1.8V-6.0A-24A67mΩSOT-89
BSS84P沟道-55V-20V-1.5V-0.3A-0.9A2.5ΩSOT23BSS84
BSS84KRP沟道-55V-20V-1.5V-0.3A-0.9A2.5Ω
SOT-323BSS84W
BSS84SR
P沟道
-55V
-20V
-1.5V
-0.3A
-0.9A
2.5Ω
SOT-523

HM2309P沟道-60V-20V-3.0V-1.8A-7A170mΩSOT23-3LSi2309
HM2309BP沟道-60V-20V-1.8V-2.2A-9A150mΩSOT23-3LSi2309
HM2309CP沟道-60V-20V-2.0V-3.0A-12A150mΩSOT-23Si2309
HM2309DP沟道-60V-20V-2.8V-1.6A-8A270mΩSOT-23Si2309
HM2309AP沟道-60V-20V-2.2V-4.0A-12A106mΩSOT23-3LSi2309
HM2309ALP沟道-60V-20V-1.5V-4.6A-17A63mΩSOT23-3LSi2309
HM2309PRP沟道-60V-20V-2.2V-3.0A-12A188mΩSOT-89
HM2309APRP沟道-60V-20V-2.2V-5.0A-20A106mΩSOT-89
HM3P10MRP沟道-100V-20V-1.8V-3.0A-9A210mΩSOT23-3L
HM6409P沟道-20V-12V-0.7V-5.0A-20A39mΩSOT23-6LAO6409/A/AO6411/
AO6415
HM6409AEP沟道
带ESD保护
-20V-8V-1V-5.5A-30A43mΩSOT23-6LAO6409/A/AO6411/
AO6415
HM6401P沟道-30V-20V-1V-5.0A-30A50mΩSOT23-6LAO6401/Si3481/
APM2605/AO6405
Si3455/SI3457/
FDC634P/FDC636P
HM4453BP沟道-12V-12V-0.65V-9.0A-36A21mΩSOP8Si4403
HM4437P沟道-12V-12V-0.7V-16A-65A11.5mΩSOP8AO4437
HM9436P沟道-20V-12V-0.8V-7.0A-40A21mΩSOP8IRF7404
HM4453P沟道-20V-12V-0.7V-9.0A-40A21mΩSOP8IRF7404
HM4453C
P沟道
-20V
-12V
-0.7V
-18A
-54A

9mΩ
SOP8
IRF7404/Si4403
HM4453AP沟道-20V-12V-0.6V-21A-63A6mΩSOP8IRF7404
HM9435/AP沟道-30V-20V-1.6V-5.1A-20A48mΩSOP8CEM9435/APM9435/
AP9435/Si9435/
FDS9435/AO4405
HM9435BP沟道-20V-12V-0.7V-5A-20A60mΩSOP8CEM9435/APM9435/
AP9435/Si9435/
FDS9435/AO4405
HM4449P沟道-30V-20V-1.9V-7A-28A30mΩSOP8AO4449
HM4435P沟道-30V-20V-1.5V-9.1A-50A15mΩSOP8AO4435/CEM4435/
APM4435/AP4435/
Si4435/FDS4435
HM4435BP沟道-30V-20V-1.7V-9.1A-50A17mΩSOP8AO4435/CEM4435/
APM4435/AP4435/
Si4435/FDS4435
HM4407P沟道-30V-20V-1.5V-12A-60A14mΩSOP8AO4407/CEM4407/
APM4407/AP4407/
Si4407/FDS4407
HM4407AP沟道-30V-20V-1.0V-12A-60A11.5mΩSOP8AO4407/CEM4407/
APM4407/AP4407/
Si4407/FDS4407
HM4409P沟道-30V-20V-1.75V-15A-80A8mΩSOP8AO4409/AO4407/
AO4435/CEM4435
APM4435/AP4435/
Si4435/FDS4435
HM4409A
P沟道
-30V
-20V
-1.5V
-20A
-60A
6.9mΩ
SOP8
AO4409/AO4447A/
AO4423/AO4455/
IRF9310/Si4425/
Si4483/Si4491/
Si4101/Si4459
HM4447/AP沟道-30V-20V-1.5V-25A-70A6mΩSOP8AO4447A/AO4423/
AO4455/IRF9310/
Si4425/Si4483/
Si4491/Si4101/Si4459
HM4485E
P沟道
带ESD保护
-35V
-20V
-2.0V
-25A
-75A
5.2mΩ
SOP8
AO4485
IRF7240
HM4443P沟道-40V-20V-1.5V-6A-24A73mΩSOP8AO4443
IRF7241
HM4485BP沟道-40V-20V-2.0V-7.5A-40A30mΩSOP8AO4485
IRF7240
HM4485P沟道-40V-20V-2.0V-13A-52A12mΩSOP8AO4485
IRF7240
HM4485AP沟道-40V-20V-1.9V-17.5A-70A7.5mΩSOP8AO4485/IRF7240
HM4441P沟道-55V-20V-2.6V-5A-30A64mΩSOP8AO4441/AO4421/
AO4443
HM4441AP沟道-60V-20V-1.65V-6A-40A53mΩSOP8AO4441/AO4421/
AO4443
HM5P55RP沟道-55V-20V-2.6V-5A-25A64mΩSOT-223
HM4421CP沟道-60V-20V-2.2V-5A-20A106mΩSOP8AO4421
HM4421BP沟道-60V-20V-2.9V-6.5A-20A39mΩSOP8AO4421
HM4421A
P沟道
-60V
-20V
-2.6V
-9A
-27A
25mΩ
SOP8
AO4421
HM4421P沟道-60V-20V-1.9V-12A-36A23mΩSOP8AO4421
HM4421D
P沟道
-60V
-20V
-2.6V
-14A
-42A
20mΩ
SOP8
AO4421
HM4487BP沟道
带ESD保护
-100V-20V-1.9V-3.5A-13A170mΩSOP8AO4487
HM4487P沟道
带ESD保护
-100V-20V-1.9V-4.5A-18A85mΩSOP8AO4487
HM4487AP沟道
带ESD保护
-100V-20V-1.9V-7.5A-30A44mΩSOP8AO4487
HM1P10MRP沟道-100V-20V-1.5V-0.9A-1.8A520mΩSOT23-3L
HM3P10MRP沟道-100V-20V-1.4V-3A-9A210mΩSOT23-3L
HM2P10R/PRP沟道-100V-20V-1.5V-2A-6A250mΩSOT-223/
SOT-89

HM4P10R/PRP沟道-18V-12V-2.5V-4A-12A80mΩSOT-223/
SOT-89

HM1P15MR/PRP沟道-150V-20V-1.5V-1A-3A780mΩSOT23-3L/
SOT-89

HM02P30R/PR
P沟道
-300V
-20V
-0.85V
-0.2A
-0.6A
17mΩ
SOT-223/
SOT-89

HM5853P沟道-22V-8V-0.69V-3A-12A110mΩDFN2X3-8LSi5853/AON4703/
NHPD4P02
HM16P12DP沟道-12V-12V-0.7V-16A-65A18mΩDFN2X2-6LAON2701/AON2401/
3/5/IRLHS2242
HM2380DR
P沟道
-20V
-12V
-0.55V
-7.5A
-24A
18mΩ
DFN2X2-6L

HM2305DP沟道-20V-12V-0.7V-8A-32A39mΩDFN2X2-6LAON2405
HM20P10D
P沟道
-20V
-20V
-0.85V
-10A
-40A
19mΩ
DFN2X2-6L
AON2405/WPM1481
HM2307D
P沟道
-20V
-12V
-0.6V
-8A
-32A
15mΩ
DFN2X2-6L
AON2405/WPM1481
HM3401DRP沟道-30V-12V-1.0V-6A-30A50mΩDFN2X2-6LAON2407/AON2409
HM2319DP沟道-40V-20V-1.5V-7A-21A73mΩDFN2X2-6L
HM2309DRP沟道-60V-20V-1.8V-4A-16A150mΩDFN2X2-6L
HM4P10D
P沟道
-100V
-20V
-1.4V
-4A
-12A
210mΩ
DFN2X2-6L

P Channel Low Voltage MOS+Schottky Diode

Model No.ChannelVDS
(Max)
VGSVTH
(Typ)
ID
(Max) 
IDMRDS
(on)
(Max)
VRIFPackageSubstitution for below items
HM5853P沟道
-20V
-8V
-0.6V
-2A
-8A
130mΩ
20V
1A
DFN3*2-8
Left&Right Structure:
P Channel:20V/2A;
Schottky Diode:20V/1A

Remarks:


1. The marked Id current is the maximum normal current of the MOS chip. The maximum normal current in actual use is also limited by the maximum current of the package. Therefore, the maximum current limit of the package shall be considered when the customer designs the product. It is suggested that the customer should consider the internal resistance parameter of MOS more importantly when designing the product.

2. It is recommended that a resistor (10K) and a voltage stabilizing diode (5V-12V) be connected between the gate source (G/S) poles of MOS to protect the overvoltage of the gate source (G/S) pole.

3. It is recommended to increase the opening voltage of MOS tube as much as possible, so that MOS tube can be fully opened and conducted. At this time, the internal resistance is minimum, and it is not easy to get hot. It is generally recommended that the VGS opening voltage of low voltage MOS should be set above 4.5V, and the opening voltage of medium and high voltage MOS should be set above 10V

4. Precautions for MOS circuit operation:


Static electricity can be generated in many places. The following precautions can effectively prevent damage to MOS circuits caused by static discharge:

• Operators shall be grounded through anti-static wrist strap.

• The equipment enclosure must be grounded.

• Tools used during assembly must be grounded.

• Must be packed or transported with conductor or anti-static materials

Our HM2301/SOT-23/3A/20V/PMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.


Our HM2302/SOT-23/3A/20V/NMOS has the following advantages: it has a current of 3A and small internal resistance, which is different from the low-end 1A product in the market. It can be used in mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.


Our HM3400/SOT-23-3L/5.8A/30V/NMOS has the following advantages: it is packaged with 5.8A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.


Our HM3401/SOT-23-3L/4.2A/30V/PMOS has the following advantages: it is packaged with 4.2A current/large SOT-23, with small internal resistance. Different from the small SOT-23 at the low end of the market, it can be used for mobile power supply/charger/multi section protection board/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.


Our HM2310/SOT-23-3L/3A/60V/NMOS has the following advantages: 1. The withstand voltage can reach 60V, sufficient for 3A current, and it is packaged with large SOT-23. 2. It can be used for LED lighting and other products with high voltage resistance.


Our HM4953 has the advantages of large current and small internal resistance, which can be used in the full color screen market.


Our HM4430 has the advantages of large current, small internal resistance and current up to 18A. It is one of the products with the largest SOP8/NMOS current on the market.


The advantage of our HM4440 is that the withstand voltage can reach 60V, which is one of the largest SOP8/NMOS withstand voltage products on the market.


Advantages of HM8810E/SOT-26&TSSOP8/7A/20V/dual N MOS: It has a current of 7A and ESD static protection. Compared with the 8205 on the market, the current is larger and the internal resistance is smaller. It can directly replace AO8810/AO8820/AO8822/SSF2418E/SSF2816E. It is mainly used in high-end lithium battery protection board/mobile phone battery/multi section protection board/mobile power supply/charger/home appliances/aeromodelling/remote control toys and other high current/low internal resistance applications.


Product application:


1. MP3/MP4/MP5/PMP player

2.MID/UMPC

3. GPS/Bluetooth headset

4. PDVD/on-board DVD/car audio

5. LCD TV/LCD display

6. Mobile power supply/electronic cigarette

7. Mobile phone battery, lithium battery protection board

8. LED lighting/LED power supply

9. LED display

10. Smart charger

11. Small household appliances, household appliances control panel

12. Computer motherboard and video card



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